HCD60R490 - аналоги, параметры транзистора - Справочник транзисторов

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April 2020 HCD60R490 60V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 8 A Excellent stability and uniformity RDS(on), max 0.49 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit D-PAK SYMBOL Switch

8.1. Size:368K semihow
hcd60r900.pdf pdf_icon

June 2019 HCD60R900 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 5.0 A Excellent stability and uniformity RDS(on), max 0.9 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.3 nC Application Package & Internal Circuit D-PAK SYMBOL Switc

8.2. Size:436K semihow
hcd60r750.pdf pdf_icon

July 2020 HCD60R750 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 5.8 A Excellent stability and uniformity RDS(on), max 0.75 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit D-PAK SYMBOL Swi

8.3. Size:418K semihow
hcd60r260.pdf pdf_icon

Sep 2020 HCD60R260 600V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 650 V Extremely low switching loss ID 14.4 A Excellent stability and uniformity RDS(on), max 0.26 100% Avalanche Tested Built-in ESD Diode Qg, Typ 31 nC Application Package & Internal Circuit D-PAK SYMBOL Switc

Другие MOSFET... SJMN600R70F , HCA60R290 , HCA65R165 , HCA70R180 , HCA90R300 , HCA90R450 , HCA90R800 , HCD60R260 , 20N50 , HCD60R750 , HCD60R900 , HCD65R2K2 , HCD65R2K7 , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 .