HCD65R830 Todos los transistores

 

HCD65R830 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCD65R830
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 55 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 5.5 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 11.2 nC
   Tiempo de subida (tr): 19 nS
   Conductancia de drenaje-sustrato (Cd): 15 pF
   Resistencia entre drenaje y fuente RDS(on): 0.83 Ohm
   Paquete / Cubierta: DPAK

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HCD65R830 Datasheet (PDF)

 ..1. Size:436K  semihow
hcd65r830.pdf

HCD65R830
HCD65R830

July 2020HCD65R830650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 0.83 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swi

 8.1. Size:437K  semihow
hcd65r450.pdf

HCD65R830
HCD65R830

Sep 2020HCD65R450650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch

 8.2. Size:413K  semihow
hcd65r2k7.pdf

HCD65R830
HCD65R830

April 2020HCD65R2K7650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 2.2 A Excellent stability and uniformityRDS(on), max 2.7 100% Avalanche TestedQg, Typ 4.1 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch Mode Power Supply (SM

 8.3. Size:425K  semihow
hcd65r2k2.pdf

HCD65R830
HCD65R830

June 2020HCD65R2K2650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 2.5 A Excellent stability and uniformityRDS(on), max 2.2 100% Avalanche TestedQg, Typ 6.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch Mode Power Supply (SMP

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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