HCD65R830 Todos los transistores

 

HCD65R830 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCD65R830

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 55 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19 nS

Cossⓘ - Capacitancia de salida: 15 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.83 Ohm

Encapsulados: DPAK

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HCD65R830 datasheet

 ..1. Size:436K  semihow
 hcd65r830.pdf pdf_icon

HCD65R830

July 2020 HCD65R830 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 0.83 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit D-PAK SYMBOL Swi

 8.1. Size:437K  semihow
 hcd65r450.pdf pdf_icon

HCD65R830

Sep 2020 HCD65R450 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 9.2 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 20 nC Application Package & Internal Circuit D-PAK SYMBOL Switch

 8.2. Size:413K  semihow
 hcd65r2k7.pdf pdf_icon

HCD65R830

April 2020 HCD65R2K7 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 2.2 A Excellent stability and uniformity RDS(on), max 2.7 100% Avalanche Tested Qg, Typ 4.1 nC Application Package & Internal Circuit D-PAK SYMBOL Switch Mode Power Supply (SM

 8.3. Size:425K  semihow
 hcd65r2k2.pdf pdf_icon

HCD65R830

June 2020 HCD65R2K2 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 2.5 A Excellent stability and uniformity RDS(on), max 2.2 100% Avalanche Tested Qg, Typ 6.2 nC Application Package & Internal Circuit D-PAK SYMBOL Switch Mode Power Supply (SMP

MOSTRAR MÁS

Otros transistores... HCA90R800 , HCD60R260 , HCD60R490 , HCD60R750 , HCD60R900 , HCD65R2K2 , HCD65R2K7 , HCD65R450 , 8N60 , HCD70R910 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , HCD90R1K6 , HCD90R450 , HCD90R800 , HCF65R320 .

History: 4N50 | BF999 | IRF7342QPBF | AUIRF7759L2TR | SUD20N10-66L | JCS10N60BT | SWB075R06ET

 

 

 

 

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