HCD65R830 PDF and Equivalents Search

 

HCD65R830 Specs and Replacement

Type Designator: HCD65R830

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 15 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm

Package: DPAK

HCD65R830 substitution

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HCD65R830 datasheet

 ..1. Size:436K  semihow
 hcd65r830.pdf pdf_icon

HCD65R830

July 2020 HCD65R830 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 0.83 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit D-PAK SYMBOL Swi... See More ⇒

 8.1. Size:437K  semihow
 hcd65r450.pdf pdf_icon

HCD65R830

Sep 2020 HCD65R450 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 9.2 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 20 nC Application Package & Internal Circuit D-PAK SYMBOL Switch... See More ⇒

 8.2. Size:413K  semihow
 hcd65r2k7.pdf pdf_icon

HCD65R830

April 2020 HCD65R2K7 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 2.2 A Excellent stability and uniformity RDS(on), max 2.7 100% Avalanche Tested Qg, Typ 4.1 nC Application Package & Internal Circuit D-PAK SYMBOL Switch Mode Power Supply (SM... See More ⇒

 8.3. Size:425K  semihow
 hcd65r2k2.pdf pdf_icon

HCD65R830

June 2020 HCD65R2K2 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 2.5 A Excellent stability and uniformity RDS(on), max 2.2 100% Avalanche Tested Qg, Typ 6.2 nC Application Package & Internal Circuit D-PAK SYMBOL Switch Mode Power Supply (SMP... See More ⇒

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Detailed specifications: HCA90R800, HCD60R260, HCD60R490, HCD60R750, HCD60R900, HCD65R2K2, HCD65R2K7, HCD65R450, 8N60, HCD70R910, HCD80R1K2, HCD80R1K4, HCD90R1K0, HCD90R1K6, HCD90R450, HCD90R800, HCF65R320

Keywords - HCD65R830 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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