All MOSFET. HCD65R830 Datasheet

 

HCD65R830 Datasheet and Replacement


   Type Designator: HCD65R830
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
   Package: DPAK
      - MOSFET Cross-Reference Search

 

HCD65R830 Datasheet (PDF)

 ..1. Size:436K  semihow
 hcd65r830.pdf pdf_icon

HCD65R830

July 2020HCD65R830650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 0.83 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swi

 8.1. Size:437K  semihow
 hcd65r450.pdf pdf_icon

HCD65R830

Sep 2020HCD65R450650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch

 8.2. Size:413K  semihow
 hcd65r2k7.pdf pdf_icon

HCD65R830

April 2020HCD65R2K7650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 2.2 A Excellent stability and uniformityRDS(on), max 2.7 100% Avalanche TestedQg, Typ 4.1 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch Mode Power Supply (SM

 8.3. Size:425K  semihow
 hcd65r2k2.pdf pdf_icon

HCD65R830

June 2020HCD65R2K2650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 2.5 A Excellent stability and uniformityRDS(on), max 2.2 100% Avalanche TestedQg, Typ 6.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch Mode Power Supply (SMP

SHOW MORE

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IPW60R060C7 | SI7390DP | HSS2302B | NTP30N06 | APT4020BVR | FQU6P25TU | CHM8968JGP

Keywords - HCD65R830 MOSFET datasheet

 HCD65R830 cross reference
 HCD65R830 equivalent finder
 HCD65R830 lookup
 HCD65R830 substitution
 HCD65R830 replacement

 

 
Back to Top

 


 
.