HCD90R450 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCD90R450
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 114 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 22.1 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.45 Ohm
Paquete / Cubierta: DPAK
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HCD90R450 Datasheet (PDF)
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Otros transistores... HCD65R2K7 , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , HCD90R1K6 , NCEP15T14 , HCD90R800 , HCF65R320 , HCF65R550 , HCF70R360 , HCF70R600 , HCF70R910 , HCFL60R115 , HCFL60R150 .
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