HCD90R450 MOSFET Datasheet: N-Ch, 900V, 10.7A. Full specification with pinout and replacement list

HCD90R450 Specs and Replacement

Type Designator: HCD90R450

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 22.1 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: DPAK

HCD90R450 substitution

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HCD90R450 datasheet

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Apr 2023 HCD90R450 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 10.7 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

8.1. Size:594K semihow
hcd90r1k6.pdf pdf_icon

Apr. 2023 HCD90R1K6 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 3.8 A Excellent stability and uniformity RDS(on), max 1.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit D-PAK SYMBOL Switc... See More ⇒

8.2. Size:595K semihow
hcd90r800.pdf pdf_icon

Apr. 2023 HCD90R800 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 6.7 A Excellent stability and uniformity RDS(on), max 0.8 100% Avalanche Tested Built-in ESD Diode Qg, Typ 17.4 nC Application Package & Internal Circuit D-PAK SYMBOL Swit... See More ⇒

8.3. Size:595K semihow
hcd90r1k0.pdf pdf_icon

Apr. 2023 HCD90R1K0 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 1.0 100% Avalanche Tested Built-in ESD Diode Qg, Typ 13.7 nC Application Package & Internal Circuit D-PAK SYMBOL Swit... See More ⇒

Detailed specifications: HCD65R2K7, HCD65R450, HCD65R830, HCD70R910, HCD80R1K2, HCD80R1K4, HCD90R1K0, HCD90R1K6, IRF1405, HCD90R800, HCF65R320, HCF65R550, HCF70R360, HCF70R600, HCF70R910, HCFL60R115, HCFL60R150