HCFL65R130 Todos los transistores

 

HCFL65R130 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCFL65R130

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 202 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 25.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 61 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.143 Ohm

Encapsulados: DFN8X8

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HCFL65R130 datasheet

 ..1. Size:434K  semihow
 hcfl65r130.pdf pdf_icon

HCFL65R130

May 2020 HCFL65R130 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 25.3 A Excellent stability and uniformity RDS(on), max 143 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 65 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi

 7.1. Size:433K  semihow
 hcfl65r210.pdf pdf_icon

HCFL65R130

May 2020 HCFL65R210 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 17.1 A Excellent stability and uniformity RDS(on), max 0.23 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi

 7.2. Size:432K  semihow
 hcfl65r550.pdf pdf_icon

HCFL65R130

July 2020 HCFL65R550 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 7.7 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swit

 7.3. Size:433K  semihow
 hcfl65r380.pdf pdf_icon

HCFL65R130

May 2020 HCFL65R380 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 10.6 A Excellent stability and uniformity RDS(on), max 0.42 100% Avalanche Tested Built-in ESD Diode Qg, Typ 22.6 nC Application Package & Internal Circuit DFN8x8 SYMBOL S

MOSTRAR MÁS

Otros transistores... HCF70R360 , HCF70R600 , HCF70R910 , HCFL60R115 , HCFL60R150 , HCFL60R190 , HCFL60R290 , HCFL60R350 , MMIS60R580P , HCFL65R210 , HCFL65R380 , HCFL65R550 , HCFL70R180 , HCFL70R360 , HCFL80R250 , HCFL80R380 , HCI60R150 .

History: AOY66920 | AOW12N60 | AUIRF8736M2TR | BSC220N20NSFD | BSZ068N06NS | AUIRF7799L2TR | BSZ018NE2LSI

 

 

 

 

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