HCFL65R130 MOSFET Datasheet: N-Ch, 650V, 25.3A. Full specification with pinout and replacement list

HCFL65R130 Specs and Replacement

Type Designator: HCFL65R130

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 202 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 61 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.143 Ohm

Package: DFN8X8

HCFL65R130 substitution

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HCFL65R130 datasheet

..1. Size:434K semihow
hcfl65r130.pdf pdf_icon

May 2020 HCFL65R130 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 25.3 A Excellent stability and uniformity RDS(on), max 143 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 65 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi... See More ⇒

7.1. Size:433K semihow
hcfl65r210.pdf pdf_icon

May 2020 HCFL65R210 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 17.1 A Excellent stability and uniformity RDS(on), max 0.23 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi... See More ⇒

7.2. Size:432K semihow
hcfl65r550.pdf pdf_icon

July 2020 HCFL65R550 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 7.7 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swit... See More ⇒

7.3. Size:433K semihow
hcfl65r380.pdf pdf_icon

May 2020 HCFL65R380 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 10.6 A Excellent stability and uniformity RDS(on), max 0.42 100% Avalanche Tested Built-in ESD Diode Qg, Typ 22.6 nC Application Package & Internal Circuit DFN8x8 SYMBOL S... See More ⇒

Detailed specifications: HCF70R360, HCF70R600, HCF70R910, HCFL60R115, HCFL60R150, HCFL60R190, HCFL60R290, HCFL60R350, MMIS60R580P, HCFL65R210, HCFL65R380, HCFL65R550, HCFL70R180, HCFL70R360, HCFL80R250, HCFL80R380, HCI60R150