HCFL65R130 Datasheet and Replacement. Cross Reference Search

HCFL65R130 Datasheet (PDF)

..1. Size:434K semihow
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May 2020HCFL65R130650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 25.3 A Excellent stability and uniformityRDS(on), max 143 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

7.1. Size:433K semihow
hcfl65r210.pdf pdf_icon

May 2020HCFL65R210650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 17.1 A Excellent stability and uniformityRDS(on), max 0.23 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

7.2. Size:432K semihow
hcfl65r550.pdf pdf_icon

July 2020HCFL65R550650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 7.7 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swit

7.3. Size:433K semihow
hcfl65r380.pdf pdf_icon

May 2020HCFL65R380650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 10.6 A Excellent stability and uniformityRDS(on), max 0.42 100% Avalanche Tested Built-in ESD DiodeQg, Typ 22.6 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL S

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .