HCFL65R130 - аналоги, параметры транзистора - Справочник транзисторов

HCFL65R130 даташит

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May 2020 HCFL65R130 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 25.3 A Excellent stability and uniformity RDS(on), max 143 m 100% Avalanche Tested Built-in ESD Diode Qg, Typ 65 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi

7.1. Size:433K semihow
hcfl65r210.pdf pdf_icon

May 2020 HCFL65R210 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 17.1 A Excellent stability and uniformity RDS(on), max 0.23 100% Avalanche Tested Built-in ESD Diode Qg, Typ 40 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swi

7.2. Size:432K semihow
hcfl65r550.pdf pdf_icon

July 2020 HCFL65R550 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 7.7 A Excellent stability and uniformity RDS(on), max 0.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 16 nC Application Package & Internal Circuit DFN8x8 SYMBOL Swit

7.3. Size:433K semihow
hcfl65r380.pdf pdf_icon

May 2020 HCFL65R380 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 10.6 A Excellent stability and uniformity RDS(on), max 0.42 100% Avalanche Tested Built-in ESD Diode Qg, Typ 22.6 nC Application Package & Internal Circuit DFN8x8 SYMBOL S

Другие MOSFET... HCF70R360 , HCF70R600 , HCF70R910 , HCFL60R115 , HCFL60R150 , HCFL60R190 , HCFL60R290 , HCFL60R350 , MMIS60R580P , HCFL65R210 , HCFL65R380 , HCFL65R550 , HCFL70R180 , HCFL70R360 , HCFL80R250 , HCFL80R380 , HCI60R150 .