HCS60R099 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCS60R099
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 35 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30.7 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 75 nC
Tiempo de subida (tr): 32 nS
Conductancia de drenaje-sustrato (Cd): 70 pF
Resistencia entre drenaje y fuente RDS(on): 0.099 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET HCS60R099
HCS60R099 Datasheet (PDF)
hcs60r099.pdf
Dec 2019HCS60R099600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220F SYMBOL Swit
hcs60r099st.pdf
Dec 2019HCS60R099ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S
hcs60r260s.pdf
Sep 2020HCS60R260S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S
hcs60r150st.pdf
April 2020HCS60R150ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.4 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL
hcs60r260st.pdf
Sep 2020HCS60R260ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL
hcs60r900s.pdf
June 2019HCS60R900S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 5.0 A Excellent stability and uniformityRDS(on), max 0.9 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.3 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: CS15N50F
