All MOSFET. HCS60R099 Datasheet

 

HCS60R099 Datasheet and Replacement


   Type Designator: HCS60R099
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: TO220F
 

 HCS60R099 substitution

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HCS60R099 Datasheet (PDF)

 ..1. Size:364K  semihow
 hcs60r099.pdf pdf_icon

HCS60R099

Dec 2019HCS60R099600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220F SYMBOL Swit

 0.1. Size:370K  semihow
 hcs60r099st.pdf pdf_icon

HCS60R099

Dec 2019HCS60R099ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 30.7 A Excellent stability and uniformityRDS(on), max 99 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 75 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 8.1. Size:401K  semihow
 hcs60r260s.pdf pdf_icon

HCS60R099

Sep 2020HCS60R260S600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 14.4 A Excellent stability and uniformityRDS(on), max 0.26 100% Avalanche Tested Built-in ESD DiodeQg, Typ 31 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.2. Size:421K  semihow
 hcs60r150st.pdf pdf_icon

HCS60R099

April 2020HCS60R150ST600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.4 A Excellent stability and uniformityRDS(on), max 0.15 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

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Datasheet: HCP65R110 , HCP65R130 , HCP65R165 , HCP65R210 , HCP65R320 , HCP90R300 , HCP90R450 , HCP90R800 , IRF630 , HCS60R099ST , HCS60R150ST , HCS60R260S , HCS60R260ST , HCS60R900S , HCS65R165ST , HCS65R210ST , HCS65R450S .

History: PKCP4EB | NTMFS4923NE | BUK9880-55A | NDP603AL | PM5Q2EA | PKCD0BB | HSST3139

Keywords - HCS60R099 MOSFET datasheet

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