HCS65R830ST Todos los transistores

 

HCS65R830ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCS65R830ST
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 26 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.83 Ohm
   Paquete / Cubierta: TO220FT
 

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HCS65R830ST Datasheet (PDF)

 ..1. Size:425K  semihow
 hcs65r830st.pdf pdf_icon

HCS65R830ST

Jan. 2021HCS65R830ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 0.83 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.1. Size:421K  semihow
 hcs65r450st.pdf pdf_icon

HCS65R830ST

Sep 2020HCS65R450ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 8.2. Size:372K  semihow
 hcs65r165st.pdf pdf_icon

HCS65R830ST

Dec 2019HCS65R165ST650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 20.4 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.3. Size:419K  semihow
 hcs65r450s.pdf pdf_icon

HCS65R830ST

Sep 2020HCS65R450S650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL Sw

MOSTRAR MÁS

Otros transistores... HCS60R150ST , HCS60R260S , HCS60R260ST , HCS60R900S , HCS65R165ST , HCS65R210ST , HCS65R450S , HCS65R450ST , 2SK3878 , HCS70R180S , HCS70R230S , HCS70R600ST , HCS70R710ST , HCS70R910ST , HCS80R1K2S , HCS80R1K2ST , HCS80R1K4S .

History: FTA02N60C | MCU20N06

 

 
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