HCS65R830ST MOSFET. Datasheet pdf. Equivalent

   Type Designator: HCS65R830ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.2 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.83 Ohm
   Package: TO220FT

HCS65R830ST Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS