HCS70R710ST MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HCS70R710ST
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 16 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.71 Ohm
Paquete / Cubierta: TO220FT
Búsqueda de reemplazo de HCS70R710ST MOSFET
HCS70R710ST Datasheet (PDF)
hcs70r710st.pdf

Nov 2019HCS70R710ST700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 6.4 A Excellent stability and uniformityRDS(on), max 0.71 100% Avalanche Tested Built-in ESD DiodeQg, Typ 14 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S
hcs70r910st.pdf

March 2020HCS70R910ST700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 5.2 A Excellent stability and uniformityRDS(on), max 0.91 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL
hcs70r600st.pdf

Sep 2020HCS70R600ST700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 7.3 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL Sw
hcs70r180s.pdf

Dec 2019HCS70R180S700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 19.5 A Excellent stability and uniformityRDS(on), max 0.18 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S
Otros transistores... HCS65R165ST , HCS65R210ST , HCS65R450S , HCS65R450ST , HCS65R830ST , HCS70R180S , HCS70R230S , HCS70R600ST , AO3400 , HCS70R910ST , HCS80R1K2S , HCS80R1K2ST , HCS80R1K4S , HCS80R1K4ST , HCS90R1K0S , HCS90R1K6S , HCS90R300S .



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP20G03GD | AP200N15TLG1 | AP200N15MP | AP200N10MP | AP200N04TLG5 | AP200N04NF | AP1N10I | AP18P20P | AP18N03D | AP180N10MP | AP180N04NF | AP180N03D | AP16P02S | AP16P01BF | AP15P10D | AP15P06DF
Popular searches
ru6888r | 2sc1815y | ktc3964 | s9013 transistor equivalent | 60n60 mosfet | 2sc2412 | 2sc372 | 2sd400 datasheet