All MOSFET. HCS70R710ST Datasheet

 

HCS70R710ST MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCS70R710ST
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.71 Ohm
   Package: TO220FT

 HCS70R710ST Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCS70R710ST Datasheet (PDF)

 ..1. Size:402K  semihow
 hcs70r710st.pdf

HCS70R710ST HCS70R710ST

Nov 2019HCS70R710ST700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 6.4 A Excellent stability and uniformityRDS(on), max 0.71 100% Avalanche Tested Built-in ESD DiodeQg, Typ 14 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL S

 8.1. Size:421K  semihow
 hcs70r910st.pdf

HCS70R710ST HCS70R710ST

March 2020HCS70R910ST700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 5.2 A Excellent stability and uniformityRDS(on), max 0.91 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL

 8.2. Size:423K  semihow
 hcs70r600st.pdf

HCS70R710ST HCS70R710ST

Sep 2020HCS70R600ST700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 7.3 A Excellent stability and uniformityRDS(on), max 0.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal CircuitTO-220FT SYMBOL Sw

 8.3. Size:370K  semihow
 hcs70r180s.pdf

HCS70R710ST HCS70R710ST

Dec 2019HCS70R180S700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 19.5 A Excellent stability and uniformityRDS(on), max 0.18 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.4. Size:368K  semihow
 hcs70r230s.pdf

HCS70R710ST HCS70R710ST

June 2019HCS70R230S700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 16.0 A Excellent stability and uniformityRDS(on), max 0.23 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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