HCS90R1K0S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HCS90R1K0S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 27 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 18 nS

Cossⓘ - Capacitancia de salida: 13.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: TO220FS

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HCS90R1K0S datasheet

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hcs90r1k0s.pdf pdf_icon

HCS90R1K0S

Apr. 2023 HCS90R1K0S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 1.0 100% Avalanche Tested Built-in ESD Diode Qg, Typ 13.7 nC Application Package & Internal Circuit TO-220FS SYMBOL

 6.1. Size:543K  semihow
hcs90r1k6s.pdf pdf_icon

HCS90R1K0S

Apr. 2023 HCS90R1K6S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 3.8 A Excellent stability and uniformity RDS(on), max 1.6 100% Avalanche Tested Built-in ESD Diode Qg, Typ 9.1 nC Application Package & Internal Circuit TO-220FS SYMBOL S

 8.1. Size:544K  semihow
hcs90r450s.pdf pdf_icon

HCS90R1K0S

Apr. 2023 HCS90R450S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 10.7 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 29 nC Application Package & Internal Circuit TO-220FS SYMBOL

 8.2. Size:544K  semihow
hcs90r800s.pdf pdf_icon

HCS90R1K0S

Apr. 2023 HCS90R800S 900V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 950 V Extremely low switching loss ID 6.7 A Excellent stability and uniformity RDS(on), max 0.8 100% Avalanche Tested Built-in ESD Diode Qg, Typ 17.4 nC Application Package & Internal Circuit TO-220FS SYMBOL

Otros transistores... HCS70R230S, HCS70R600ST, HCS70R710ST, HCS70R910ST, HCS80R1K2S, HCS80R1K2ST, HCS80R1K4S, HCS80R1K4ST, IRF4905, HCS90R1K6S, HCS90R300S, HCS90R450S, HCS90R800S, HCT70R1K1, HCT70R910, HCT80R850, HCT90R1K4