All MOSFET. HCS90R1K0S Datasheet

 

HCS90R1K0S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HCS90R1K0S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13.7 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 13.3 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220FS

 HCS90R1K0S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HCS90R1K0S Datasheet (PDF)

 ..1. Size:543K  semihow
 hcs90r1k0s.pdf

HCS90R1K0S HCS90R1K0S

Apr. 2023HCS90R1K0S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 1.0 100% Avalanche Tested Built-in ESD DiodeQg, Typ 13.7 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

 6.1. Size:543K  semihow
 hcs90r1k6s.pdf

HCS90R1K0S HCS90R1K0S

Apr. 2023HCS90R1K6S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 3.8 A Excellent stability and uniformityRDS(on), max 1.6 100% Avalanche Tested Built-in ESD DiodeQg, Typ 9.1 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

 8.1. Size:544K  semihow
 hcs90r450s.pdf

HCS90R1K0S HCS90R1K0S

Apr. 2023HCS90R450S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 10.7 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 29 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

 8.2. Size:544K  semihow
 hcs90r800s.pdf

HCS90R1K0S HCS90R1K0S

Apr. 2023HCS90R800S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.8 100% Avalanche Tested Built-in ESD DiodeQg, Typ 17.4 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL

 8.3. Size:543K  semihow
 hcs90r300s.pdf

HCS90R1K0S HCS90R1K0S

Apr. 2023HCS90R300S900V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 950 V Extremely low switching lossID 14.5 A Excellent stability and uniformityRDS(on), max 0.3 100% Avalanche Tested Built-in ESD DiodeQg, Typ 43 nCApplicationPackage & Internal CircuitTO-220FS SYMBOL S

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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