HFB1N60F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFB1N60F  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 26 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm

Encapsulados: TO92

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HFB1N60F datasheet

 ..1. Size:185K  semihow
 hfb1n60f.pdf pdf_icon

HFB1N60F

Oct 2016 HFB1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant TO-92 Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Uni

 7.1. Size:238K  semihow
 hfb1n60s.pdf pdf_icon

HFB1N60F

Sep 2009 BVDSS = 600 V RDS(on) typ HFB1N60S ID = 0.3 A 600V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area

 8.1. Size:238K  semihow
 hfb1n65s.pdf pdf_icon

HFB1N60F

Dec 2012 BVDSS = 650 V RDS(on) typ HFB1N65S ID = 0.3 A 650V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area

 9.1. Size:226K  semihow
 hfb1n70s.pdf pdf_icon

HFB1N60F

Dec 2012 BVDSS = 700 V RDS(on) typ HFB1N70S ID = 0.3 A 700V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.5 nC (Typ.) Extended Safe Operating Area

MOSTRAR MÁS

Otros transistores... HCU90R1K4, HCW60R150, HCW60R190, HCW60R290, HCW65R210, HCW65R320, HFA20N50U, HFA24N50G, 2SK3568, HFC2N60U, HFD1N60F, HFD1N60SA, HFD2N60F, HFD5N60F, HFD5N65SA, HFH9N90A, HFI50N06A