HFB1N60F Datasheet. Specs and Replacement

Type Designator: HFB1N60F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 26 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm

Package: TO92

HFB1N60F substitution

- MOSFET ⓘ Cross-Reference Search

 

HFB1N60F datasheet

 ..1. Size:185K  semihow
 hfb1n60f.pdf pdf_icon

HFB1N60F

Oct 2016 HFB1N60F 600V N-Channel MOSFET Features Key Parameters Parameter Value Unit Originative New Design BVDSS 600 V Very Low Intrinsic Capacitances ID 1A Excellent Switching Characteristics RDS(on), Typ 6.5 100% Avalanche Tested Qg, Typ 3.7 nC RoHS Compliant TO-92 Symbol S D G Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Uni... See More ⇒

 7.1. Size:238K  semihow
 hfb1n60s.pdf pdf_icon

HFB1N60F

Sep 2009 BVDSS = 600 V RDS(on) typ HFB1N60S ID = 0.3 A 600V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area ... See More ⇒

 8.1. Size:238K  semihow
 hfb1n65s.pdf pdf_icon

HFB1N60F

Dec 2012 BVDSS = 650 V RDS(on) typ HFB1N65S ID = 0.3 A 650V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.0 nC (Typ.) Extended Safe Operating Area... See More ⇒

 9.1. Size:226K  semihow
 hfb1n70s.pdf pdf_icon

HFB1N60F

Dec 2012 BVDSS = 700 V RDS(on) typ HFB1N70S ID = 0.3 A 700V N-Channel MOSFET TO-92 FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology D Very Low Intrinsic Capacitances Excellent Switching Characteristics G Unrivalled Gate Charge 3.5 nC (Typ.) Extended Safe Operating Area... See More ⇒

SHOW MORE

Detailed specifications: HCU90R1K4, HCW60R150, HCW60R190, HCW60R290, HCW65R210, HCW65R320, HFA20N50U, HFA24N50G, 2SK3568, HFC2N60U, HFD1N60F, HFD1N60SA, HFD2N60F, HFD5N60F, HFD5N65SA, HFH9N90A, HFI50N06A

Keywords - HFB1N60F MOSFET specs

 HFB1N60F cross reference

 HFB1N60F equivalent finder

 HFB1N60F pdf lookup

 HFB1N60F substitution

 HFB1N60F replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility