HFS10N80A Todos los transistores

 

HFS10N80A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFS10N80A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 65 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 192 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.15 Ohm
   Paquete / Cubierta: TO220F
 

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HFS10N80A Datasheet (PDF)

 ..1. Size:669K  semihow
 hfs10n80a.pdf pdf_icon

HFS10N80A

June 2021BVDSS = 800 VRDS(on) Typ = 0.92 HFS10N80AID = 9.4 A800V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Ope

 6.1. Size:210K  semihow
 hfs10n80.pdf pdf_icon

HFS10N80A

Dec 2010BVDSS = 800 VRDS(on) typ = 0.92 HFS10N80ID = 9.4 A800V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Unrivalled Gate Charge : 58 nC (Typ ) E

 8.1. Size:159K  semihow
 hfs10n65s.pdf pdf_icon

HFS10N80A

March 2014BVDSS = 650 VRDS(on) typ HFS10N65SID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area

 8.2. Size:302K  semihow
 hfs10n65u.pdf pdf_icon

HFS10N80A

Oct 2013BVDSS = 650 VRDS(on) typ = 0.8 HFS10N65UID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo

MOSTRAR MÁS

Otros transistores... HFI5N60S , HFP2N60F , HFP4N60F , HFP50N06A , HFP5N60F , HFP730F , HFP830F , HFS10N65JS , IRFZ48N , HFS12N65JS , HFS12N65SA , HFS18N50UT , HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F , HFS4N60FS .

History: SIHU3N50DA | SDF04N65 | FDS4435BZF085 | STB432S | 2SK4177 | CM18N50F | FRF9150R

 

 
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