HFS10N80A
MOSFET. Datasheet pdf. Equivalent
Type Designator: HFS10N80A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 65
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 9.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 58
nC
trⓘ - Rise Time: 130
nS
Cossⓘ -
Output Capacitance: 192
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.15
Ohm
Package:
TO220F
HFS10N80A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HFS10N80A
Datasheet (PDF)
..1. Size:669K semihow
hfs10n80a.pdf 
June 2021BVDSS = 800 VRDS(on) Typ = 0.92 HFS10N80AID = 9.4 A800V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Ope
6.1. Size:210K semihow
hfs10n80.pdf
Dec 2010BVDSS = 800 VRDS(on) typ = 0.92 HFS10N80ID = 9.4 A800V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Unrivalled Gate Charge : 58 nC (Typ ) E
8.1. Size:159K semihow
hfs10n65s.pdf
March 2014BVDSS = 650 VRDS(on) typ HFS10N65SID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area
8.2. Size:302K semihow
hfs10n65u.pdf
Oct 2013BVDSS = 650 VRDS(on) typ = 0.8 HFS10N65UID = 9.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lo
8.3. Size:302K semihow
hfs10n60u.pdf
Oct 2013BVDSS = 600 VRDS(on) typ = 0.67 HFS10N60UID = 9.5 A600V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area L
8.4. Size:243K semihow
hfs10n60s.pdf
Nov 2007BVDSS = 600 VRDS(on) typ = 0.67 HFS10N60SID = 9.5 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Unrivalled Gate Charge : 29 nC (Typ )
8.5. Size:634K semihow
hfs10n65js.pdf
Feb 2023HFS10N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 10 A Excellent Switching CharacteristicsRDS(on), Typ 0.82 100% Avalanche TestedQg, Typ 36.3 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum
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