HFS5N65SA Todos los transistores

 

HFS5N65SA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HFS5N65SA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 53 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.9 Ohm
   Paquete / Cubierta: TO220F
 

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HFS5N65SA datasheet

 ..1. Size:792K  semihow
hfs5n65sa.pdf pdf_icon

HFS5N65SA

Dec. 2021 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65SA ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 14.2 nC (Typ.) Extended Safe Op

 6.1. Size:202K  semihow
hfs5n65s.pdf pdf_icon

HFS5N65SA

Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Unrivalled Gate Charge 10 5 nC (Typ )

 7.1. Size:598K  semihow
hfs5n65js.pdf pdf_icon

HFS5N65SA

Mar. 2023 HFS5N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 4.0 A Excellent Switching Characteristics RDS(on), Typ 2.26 100% Avalanche Tested Qg, Typ 12.7 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum

 7.2. Size:315K  semihow
hfs5n65u.pdf pdf_icon

HFS5N65SA

March 2013 BVDSS = 650 V RDS(on) typ HFS5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area

Otros transistores... HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F , HFS4N60FS , HFS50N06A , HFS5N60F , HFS5N65JS , RU7088R , HFS730F , HFS730S , HFS7N80A , HFS830F , HFS8N60UA , HFS8N65JS , HFS8N65SA , HFS9N90A .

History: MS34N34 | PJP5NA50 | D7N60 | AGM30P35M | AOD438 | AGM30P55D | SVT035R5NL5

 

 
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