HFS5N65SA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFS5N65SA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 53 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.9 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de HFS5N65SA MOSFET
HFS5N65SA datasheet
hfs5n65sa.pdf
Dec. 2021 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65SA ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 14.2 nC (Typ.) Extended Safe Op
hfs5n65s.pdf
Oct 2009 BVDSS = 650 V RDS(on) typ = 2.3 HFS5N65S ID = 4.2 A 650V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Unrivalled Gate Charge 10 5 nC (Typ )
hfs5n65js.pdf
Mar. 2023 HFS5N65JS 650V N-Channel MOSFET Features Key Parameters Parameter Value Unit Superior Avalanche Rugged Technology BVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic Capacitances ID 4.0 A Excellent Switching Characteristics RDS(on), Typ 2.26 100% Avalanche Tested Qg, Typ 12.7 nC RoHS Compliant TO-220FS Symbol S D G Absolute Maximum
hfs5n65u.pdf
March 2013 BVDSS = 650 V RDS(on) typ HFS5N65U ID = 4.5 A 650V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 10.5 nC (Typ.) Extended Safe Operating Area
Otros transistores... HFS2N60F , HFS2N60FS , HFS3N80A , HFS4N60F , HFS4N60FS , HFS50N06A , HFS5N60F , HFS5N65JS , RU7088R , HFS730F , HFS730S , HFS7N80A , HFS830F , HFS8N60UA , HFS8N65JS , HFS8N65SA , HFS9N90A .
History: MS34N34 | PJP5NA50 | D7N60 | AGM30P35M | AOD438 | AGM30P55D | SVT035R5NL5
History: MS34N34 | PJP5NA50 | D7N60 | AGM30P35M | AOD438 | AGM30P55D | SVT035R5NL5
Liste
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