All MOSFET. HFS5N65SA Datasheet

 

HFS5N65SA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HFS5N65SA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14.2 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 53 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.9 Ohm
   Package: TO220F

 HFS5N65SA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HFS5N65SA Datasheet (PDF)

 ..1. Size:792K  semihow
 hfs5n65sa.pdf

HFS5N65SA HFS5N65SA

Dec. 2021BVDSS = 650 VRDS(on) typ = 2.3 HFS5N65SAID = 4.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 14.2 nC (Typ.) Extended Safe Op

 6.1. Size:202K  semihow
 hfs5n65s.pdf

HFS5N65SA HFS5N65SA

Oct 2009BVDSS = 650 VRDS(on) typ = 2.3 HFS5N65SID = 4.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Unrivalled Gate Charge : 10 5 nC (Typ )

 7.1. Size:598K  semihow
 hfs5n65js.pdf

HFS5N65SA HFS5N65SA

Mar. 2023HFS5N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.0 A Excellent Switching CharacteristicsRDS(on), Typ 2.26 100% Avalanche TestedQg, Typ 12.7 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

 7.2. Size:315K  semihow
 hfs5n65u.pdf

HFS5N65SA HFS5N65SA

March 2013BVDSS = 650 VRDS(on) typ HFS5N65U ID = 4.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC (Typ.) Extended Safe Operating Area

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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