HFS9N90A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HFS9N90A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 120 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO220F

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HFS9N90A datasheet

 ..1. Size:612K  semihow
 hfs9n90a.pdf pdf_icon

HFS9N90A

Feb 2023 BVDSS = 900 V RDS(on) Typ = 1.4 HFS9N90A ID = 9.0 A 900V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 52 nC (Typ.) Extended Safe Operat

 9.1. Size:225K  vishay
 irfs9n60a sihfs9n60a.pdf pdf_icon

HFS9N90A

IRFS9N60A, SiHFS9N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 requirement RDS(on) ( )VGS = 10 V 0.75 Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Available Fully characterized capacitance and avalanche Qgd (nC) 20 voltage and curr

 9.2. Size:212K  vishay
 sihfs9n60a.pdf pdf_icon

HFS9N90A

IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 0.75 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 49 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 13 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanch

 9.3. Size:160K  semihow
 hfs9n50.pdf pdf_icon

HFS9N90A

Mar 2008 BVDSS = 500 V RDS(on) typ HFS9N50 ID = 9.0 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(

MOSTRAR MÁS

Otros transistores... HFS5N65SA, HFS730F, HFS730S, HFS7N80A, HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA, IRFZ44N, HFT1N60F, HFU1N60F, HFU1N60S, HFU1N60SA, HFU2N60F, HFU2N60S, HFU2N60U, HFU4N50