HFS9N90A - параметры транзистора MOSFET, его аналоги, datasheet

HFS9N90A Datasheet (PDF)

..1. Size:612K semihow
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Feb 2023BVDSS = 900 VRDS(on) Typ = 1.4 HFS9N90AID = 9.0 A900V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 52 nC (Typ.) Extended Safe Operat

9.1. Size:225K vishay
irfs9n60a sihfs9n60a.pdf pdf_icon

IRFS9N60A, SiHFS9N60Awww.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600requirementRDS(on) ()VGS = 10 V 0.75Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49ruggednessQgs (nC) 13Available Fully characterized capacitance and avalanche Qgd (nC) 20voltage and curr

9.2. Size:212K vishay
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IRFS9N60A, SiHFS9N60AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 0.75 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 49 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 13RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanch

9.3. Size:160K semihow
hfs9n50.pdf pdf_icon

Mar 2008BVDSS = 500 VRDS(on) typ HFS9N50ID = 9.0 A500V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Extended Safe Operating Area Lower RDS(

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .