HFS9N90A Datasheet. Specs and Replacement

Type Designator: HFS9N90A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO220F

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HFS9N90A datasheet

 ..1. Size:612K  semihow
 hfs9n90a.pdf pdf_icon

HFS9N90A

Feb 2023 BVDSS = 900 V RDS(on) Typ = 1.4 HFS9N90A ID = 9.0 A 900V N-Channel MOSFET TO-220F FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 52 nC (Typ.) Extended Safe Operat... See More ⇒

 9.1. Size:225K  vishay
 irfs9n60a sihfs9n60a.pdf pdf_icon

HFS9N90A

IRFS9N60A, SiHFS9N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Qg results in simple drive VDS (V) 600 requirement RDS(on) ( )VGS = 10 V 0.75 Available Improved gate, avalanche and dynamic dV/dt Qg max. (nC) 49 ruggedness Qgs (nC) 13 Available Fully characterized capacitance and avalanche Qgd (nC) 20 voltage and curr... See More ⇒

 9.2. Size:212K  vishay
 sihfs9n60a.pdf pdf_icon

HFS9N90A

IRFS9N60A, SiHFS9N60A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 600 Definition RDS(on) ( )VGS = 10 V 0.75 Low Gate Charge Qg results in Simple Drive Requirement Qg (Max.) (nC) 49 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 13 Ruggedness Qgd (nC) 20 Fully Characterized Capacitance and Avalanch... See More ⇒

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 hfs9n50.pdf pdf_icon

HFS9N90A

Mar 2008 BVDSS = 500 V RDS(on) typ HFS9N50 ID = 9.0 A 500V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Extended Safe Operating Area Lower RDS(... See More ⇒

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Detailed specifications: HFS5N65SA, HFS730F, HFS730S, HFS7N80A, HFS830F, HFS8N60UA, HFS8N65JS, HFS8N65SA, IRFZ44N, HFT1N60F, HFU1N60F, HFU1N60S, HFU1N60SA, HFU2N60F, HFU2N60S, HFU2N60U, HFU4N50

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