HFU5N60F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HFU5N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 78 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 70 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
Paquete / Cubierta: TO251
Búsqueda de reemplazo de HFU5N60F MOSFET
HFU5N60F Datasheet (PDF)
hfu5n60f hfd5n60f.pdf

Oct 2016HFU5N60F / HFD5N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 5A Excellent Switching CharacteristicsRDS(on), Typ 1.8 100% Avalanche TestedQg, Typ 12.5 nC RoHS CompliantHFU5N60F HFD5N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unles
hfd5n60s hfu5n60s.pdf

June 2015BVDSS = 600 VRDS(on) typ HFD5N60S / HFU5N60SID = 4.3 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N60S HFU5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC
hfd5n60u hfu5n60u.pdf

June 2015BVDSS = 600 VRDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC
hfu5n65sa hfd5n65sa.pdf

May. 2022HFU5N65SA / HFD5N65SA650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.2 A Excellent Switching CharacteristicsRDS(on), Typ 2.3 100% Avalanche TestedQg, Typ 14.2 nC RoHS CompliantHFU5N65SA HFD5N65SASymbolTO
Otros transistores... HFU1N60SA , HFU2N60F , HFU2N60S , HFU2N60U , HFU4N50 , HFU5N40 , HFU5N50S , HFU5N50U , IRFB4110 , HFU5N60S , HFU5N60U , HFU5N65SA , HFW50N06A , HFW840 , HRA40N08K , HRA45N08K , HRD120N10K .
History: BL10N80-A | SFB037N40C2 | VBZA4409 | JCS540CT | APT12045L2VFRG | BL12N65A-P | SFB034N80C3
History: BL10N80-A | SFB037N40C2 | VBZA4409 | JCS540CT | APT12045L2VFRG | BL12N65A-P | SFB034N80C3



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