HFU5N60F Datasheet and Replacement. Cross Reference Search

HFU5N60F Datasheet (PDF)

..1. Size:291K semihow
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Oct 2016HFU5N60F / HFD5N60F600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 5A Excellent Switching CharacteristicsRDS(on), Typ 1.8 100% Avalanche TestedQg, Typ 12.5 nC RoHS CompliantHFU5N60F HFD5N60FSymbolTO-251 TO-252DSSDGGAbsolute Maximum Ratings TC=25 unles

7.1. Size:324K semihow
hfd5n60s hfu5n60s.pdf pdf_icon

June 2015BVDSS = 600 VRDS(on) typ HFD5N60S / HFU5N60SID = 4.3 A600V N-Channel MOSFETD-PAK I-PAK2FEATURES113 23 Originative New DesignHFD5N60S HFU5N60S Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

7.2. Size:357K semihow
hfd5n60u hfu5n60u.pdf pdf_icon

June 2015BVDSS = 600 VRDS(on) typ = 2.0 HFD5N60U / HFU5N60U ID = 3.6 A600V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD5N60U HFU5N60U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 10.5 nC

8.1. Size:1121K semihow
hfu5n65sa hfd5n65sa.pdf pdf_icon

May. 2022HFU5N65SA / HFD5N65SA650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 4.2 A Excellent Switching CharacteristicsRDS(on), Typ 2.3 100% Avalanche TestedQg, Typ 14.2 nC RoHS CompliantHFU5N65SA HFD5N65SASymbolTO

Datasheet: HFU1N60SA , HFU2N60F , HFU2N60S , HFU2N60U , HFU4N50 , HFU5N40 , HFU5N50S , HFU5N50U , IRFP260N , HFU5N60S , HFU5N60U , HFU5N65SA , HFW50N06A , HFW840 , HRA40N08K , HRA45N08K , HRD120N10K .