HRLT1B0N10K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HRLT1B0N10K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 52 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm
Paquete / Cubierta: SOT223
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HRLT1B0N10K Datasheet (PDF)
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Jan 2017 HRLT1B0N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit ESD Protect BVDSS 100 V Reliable and Rugged ID 3.5 A High Density Cell Design for Ultra Low RDS(on) RDS(on), typ @10V 85 m 100% Avalanche Tested RDS(on), typ @4.5V 100 m RoHS Compliant SOT-223 Symbol S D G Absolute Maximum Ratings TJ=25 un
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l8050hrlt1g.pdf

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Otros transistores... HRLP150N10K , HRLP250N10K , HRLP33N03K , HRLP370N10K , HRLP40N04K , HRLP55N03K , HRLP72N06 , HRLP80N06K , 2N60 , HRLU125N06K , HRLU150N10K , HRLU1B8N10K , HRLU370N10K , HRLU55N03K , HRLU80N06K , HRLW250N10K , HRP100N08K .
History: SSF6401 | SWHA7N65D | HSM3214 | NTLJD4116N | IRLZ34S
History: SSF6401 | SWHA7N65D | HSM3214 | NTLJD4116N | IRLZ34S



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