HRLT1B0N10K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HRLT1B0N10K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24 nS

Cossⓘ - Capacitancia de salida: 52 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.105 Ohm

Encapsulados: SOT223

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HRLT1B0N10K datasheet

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hrlt1b0n10k.pdf pdf_icon

HRLT1B0N10K

Jan 2017 HRLT1B0N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit ESD Protect BVDSS 100 V Reliable and Rugged ID 3.5 A High Density Cell Design for Ultra Low RDS(on) RDS(on), typ @10V 85 m 100% Avalanche Tested RDS(on), typ @4.5V 100 m RoHS Compliant SOT-223 Symbol S D G Absolute Maximum Ratings TJ=25 un

 9.1. Size:84K  lrc
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

HRLT1B0N10K

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir

 9.2. Size:88K  lrc
l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf pdf_icon

HRLT1B0N10K

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

 9.3. Size:84K  lrc
l8050hrlt1g.pdf pdf_icon

HRLT1B0N10K

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P

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