HRLT1B0N10K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HRLT1B0N10K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.1 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 3.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 20 nC
Tiempo de subida (tr): 24 nS
Conductancia de drenaje-sustrato (Cd): 52 pF
Resistencia entre drenaje y fuente RDS(on): 0.105 Ohm
Paquete / Cubierta: SOT223
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HRLT1B0N10K Datasheet (PDF)
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Jan 2017 HRLT1B0N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit ESD Protect BVDSS 100 V Reliable and Rugged ID 3.5 A High Density Cell Design for Ultra Low RDS(on) RDS(on), typ @10V 85 m 100% Avalanche Tested RDS(on), typ @4.5V 100 m RoHS Compliant SOT-223 Symbol S D G Absolute Maximum Ratings TJ=25 un
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