All MOSFET. HRLT1B0N10K Datasheet

 

HRLT1B0N10K Datasheet and Replacement


   Type Designator: HRLT1B0N10K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 20 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOT223
 

 HRLT1B0N10K substitution

   - MOSFET ⓘ Cross-Reference Search

 

HRLT1B0N10K Datasheet (PDF)

 ..1. Size:1045K  semihow
hrlt1b0n10k.pdf pdf_icon

HRLT1B0N10K

Jan 2017 HRLT1B0N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit ESD Protect BVDSS 100 V Reliable and Rugged ID 3.5 A High Density Cell Design for Ultra Low RDS(on) RDS(on), typ @10V 85 m 100% Avalanche Tested RDS(on), typ @4.5V 100 m RoHS Compliant SOT-223 Symbol S D G Absolute Maximum Ratings TJ=25 un

 9.1. Size:84K  lrc
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf pdf_icon

HRLT1B0N10K

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8550HPLT1GSeriesPNP SiliconS-L8550HPLT1GFEATURESeries High current capacity in compact package. Epitaxial planar type. PNP complement: L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requir

 9.2. Size:88K  lrc
l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf pdf_icon

HRLT1B0N10K

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURESeries High current capacity in compact package.IC =1.5 A.3 Epitaxial planar type. NPN complement: L8050HPb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and

 9.3. Size:84K  lrc
l8050hrlt1g.pdf pdf_icon

HRLT1B0N10K

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL8050HQLTIGSeriesNPN SiliconS-L8050HQLTIGFEATURE High current capacity in compact package.SeriesIC =1.5 A. Epitaxial planar type.3 NPN complement: L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qualified and P

Datasheet: HRLP150N10K , HRLP250N10K , HRLP33N03K , HRLP370N10K , HRLP40N04K , HRLP55N03K , HRLP72N06 , HRLP80N06K , 2N60 , HRLU125N06K , HRLU150N10K , HRLU1B8N10K , HRLU370N10K , HRLU55N03K , HRLU80N06K , HRLW250N10K , HRP100N08K .

History: WSD30L120DN56 | HSM3214 | STI12NM50N

Keywords - HRLT1B0N10K MOSFET datasheet

 HRLT1B0N10K cross reference
 HRLT1B0N10K equivalent finder
 HRLT1B0N10K lookup
 HRLT1B0N10K substitution
 HRLT1B0N10K replacement

 

 
Back to Top

 


 
.