HRLT1B0N10K Datasheet. Specs and Replacement
Type Designator: HRLT1B0N10K
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 52 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
Package: SOT223
HRLT1B0N10K substitution
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HRLT1B0N10K datasheet
hrlt1b0n10k.pdf
Jan 2017 HRLT1B0N10K 100V N-Channel Trench MOSFET Features Key Parameters Parameter Value Unit ESD Protect BVDSS 100 V Reliable and Rugged ID 3.5 A High Density Cell Design for Ultra Low RDS(on) RDS(on), typ @10V 85 m 100% Avalanche Tested RDS(on), typ @4.5V 100 m RoHS Compliant SOT-223 Symbol S D G Absolute Maximum Ratings TJ=25 un... See More ⇒
l8550hplt1g l8550hqlt1g l8550hrlt1g l8550hslt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8550HPLT1G Series PNP Silicon S-L8550HPLT1G FEATURE Series High current capacity in compact package. Epitaxial planar type. PNP complement L8550H 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requir... See More ⇒
l8050hplt1g l8050hplt3g l8050hqlt1g l8050hqlt3g l8050hrlt1g l8050hrlt3g l8050hslt1g l8050hslt3g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE Series High current capacity in compact package. IC =1.5 A. 3 Epitaxial planar type. NPN complement L8050H Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and... See More ⇒
l8050hrlt1g.pdf
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L8050HQLTIG Series NPN Silicon S-L8050HQLTIG FEATURE High current capacity in compact package. Series IC =1.5 A. Epitaxial planar type. 3 NPN complement L8050H Pb-Free Package is available. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qualified and P... See More ⇒
Detailed specifications: HRLP150N10K, HRLP250N10K, HRLP33N03K, HRLP370N10K, HRLP40N04K, HRLP55N03K, HRLP72N06, HRLP80N06K, 20N50, HRLU125N06K, HRLU150N10K, HRLU1B8N10K, HRLU370N10K, HRLU55N03K, HRLU80N06K, HRLW250N10K, HRP100N08K
Keywords - HRLT1B0N10K MOSFET specs
HRLT1B0N10K cross reference
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HRLT1B0N10K substitution
HRLT1B0N10K replacement
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History: HRLU150N10K
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