OSG07N65DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG07N65DF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 28.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17.8 nS

Cossⓘ - Capacitancia de salida: 24.1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de OSG07N65DF MOSFET

- Selecciónⓘ de transistores por parámetros

 

OSG07N65DF datasheet

 ..1. Size:878K  oriental semi
 osg07n65df.pdf pdf_icon

OSG07N65DF

OSG07N65DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.1. Size:837K  oriental semi
 osg07n65af.pdf pdf_icon

OSG07N65DF

OSG07N65AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.2. Size:842K  oriental semi
 osg07n65ff.pdf pdf_icon

OSG07N65DF

OSG07N65FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.3. Size:893K  oriental semi
 osg07n65pf.pdf pdf_icon

OSG07N65DF

OSG07N65PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

MOSTRAR MÁS

Otros transistores... HRU72N06K, HRU80N06K, HRW370N10K, HN75N09AP, TMU6N70, TMD6N70G, TMU6N70G, OSG07N65AF, AON6414A, OSG07N65FF, OSG07N65PF, OSG50R1K5AF, OSG50R1K5DF, OSG50R1K5FF, OSG50R1K5PF, OSG50R500AF, OSG50R500DF