OSG07N65DF datasheet, аналоги, основные параметры

Наименование производителя: OSG07N65DF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 28.4 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 4.5 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 17.8 ns

Cossⓘ - Выходная емкость: 24.1 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm

Тип корпуса: TO252

Аналог (замена) для OSG07N65DF

- подборⓘ MOSFET транзистора по параметрам

 

OSG07N65DF даташит

 ..1. Size:878K  oriental semi
 osg07n65df.pdf pdf_icon

OSG07N65DF

OSG07N65DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.1. Size:837K  oriental semi
 osg07n65af.pdf pdf_icon

OSG07N65DF

OSG07N65AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.2. Size:842K  oriental semi
 osg07n65ff.pdf pdf_icon

OSG07N65DF

OSG07N65FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.3. Size:893K  oriental semi
 osg07n65pf.pdf pdf_icon

OSG07N65DF

OSG07N65PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

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Другие IGBT... HRU72N06K, HRU80N06K, HRW370N10K, HN75N09AP, TMU6N70, TMD6N70G, TMU6N70G, OSG07N65AF, AON6414A, OSG07N65FF, OSG07N65PF, OSG50R1K5AF, OSG50R1K5DF, OSG50R1K5FF, OSG50R1K5PF, OSG50R500AF, OSG50R500DF