All MOSFET. OSG07N65DF Datasheet

 

OSG07N65DF Datasheet and Replacement


   Type Designator: OSG07N65DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17.8 nS
   Cossⓘ - Output Capacitance: 24.1 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO252
 

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OSG07N65DF Datasheet (PDF)

 ..1. Size:878K  oriental semi
 osg07n65df.pdf pdf_icon

OSG07N65DF

OSG07N65DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.1. Size:837K  oriental semi
 osg07n65af.pdf pdf_icon

OSG07N65DF

OSG07N65AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.2. Size:842K  oriental semi
 osg07n65ff.pdf pdf_icon

OSG07N65DF

OSG07N65FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

 6.3. Size:893K  oriental semi
 osg07n65pf.pdf pdf_icon

OSG07N65DF

OSG07N65PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switchi

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Datasheet: HRU72N06K , HRU80N06K , HRW370N10K , HN75N09AP , TMU6N70 , TMD6N70G , TMU6N70G , OSG07N65AF , IRFB4110 , OSG07N65FF , OSG07N65PF , OSG50R1K5AF , OSG50R1K5DF , OSG50R1K5FF , OSG50R1K5PF , OSG50R500AF , OSG50R500DF .

History: APM2324A | DH019N04I

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