OSG50R1K5DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG50R1K5DF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.8 nS

Cossⓘ - Capacitancia de salida: 51.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: TO252

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OSG50R1K5DF datasheet

 ..1. Size:396K  oriental semi
 osg50r1k5df.pdf pdf_icon

OSG50R1K5DF

OSG50R1K5DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:418K  oriental semi
 osg50r1k5pf.pdf pdf_icon

OSG50R1K5DF

OSG50R1K5PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:369K  oriental semi
 osg50r1k5af.pdf pdf_icon

OSG50R1K5DF

OSG50R1K5AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:369K  oriental semi
 osg50r1k5ff.pdf pdf_icon

OSG50R1K5DF

OSG50R1K5FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... TMU6N70, TMD6N70G, TMU6N70G, OSG07N65AF, OSG07N65DF, OSG07N65FF, OSG07N65PF, OSG50R1K5AF, 8205A, OSG50R1K5FF, OSG50R1K5PF, OSG50R500AF, OSG50R500DF, OSG50R500FF, OSG50R500PF, OSG55R028HF, OSG55R028HTF