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OSG50R1K5DF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: OSG50R1K5DF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 20 W
   Предельно допустимое напряжение сток-исток |Uds|: 500 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Пороговое напряжение включения |Ugs(th)|: 3.9 V
   Максимально допустимый постоянный ток стока |Id|: 3 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 4.84 nC
   Время нарастания (tr): 4.8 ns
   Выходная емкость (Cd): 51.7 pf
   Сопротивление сток-исток открытого транзистора (Rds): 1.5 Ohm
   Тип корпуса: TO252

 Аналог (замена) для OSG50R1K5DF

 

 

OSG50R1K5DF Datasheet (PDF)

 ..1. Size:396K  oriental semi
 osg50r1k5df.pdf

OSG50R1K5DF OSG50R1K5DF

OSG50R1K5DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:418K  oriental semi
 osg50r1k5pf.pdf

OSG50R1K5DF OSG50R1K5DF

OSG50R1K5PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:369K  oriental semi
 osg50r1k5af.pdf

OSG50R1K5DF OSG50R1K5DF

OSG50R1K5AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:369K  oriental semi
 osg50r1k5ff.pdf

OSG50R1K5DF OSG50R1K5DF

OSG50R1K5FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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