All MOSFET. OSG50R1K5DF Datasheet

 

OSG50R1K5DF Datasheet and Replacement


   Type Designator: OSG50R1K5DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 51.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO252
 

 OSG50R1K5DF substitution

   - MOSFET ⓘ Cross-Reference Search

 

OSG50R1K5DF Datasheet (PDF)

 ..1. Size:396K  oriental semi
 osg50r1k5df.pdf pdf_icon

OSG50R1K5DF

OSG50R1K5DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:418K  oriental semi
 osg50r1k5pf.pdf pdf_icon

OSG50R1K5DF

OSG50R1K5PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.2. Size:369K  oriental semi
 osg50r1k5af.pdf pdf_icon

OSG50R1K5DF

OSG50R1K5AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.3. Size:369K  oriental semi
 osg50r1k5ff.pdf pdf_icon

OSG50R1K5DF

OSG50R1K5FF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

SHOW MORE

Datasheet: TMU6N70 , TMD6N70G , TMU6N70G , OSG07N65AF , OSG07N65DF , OSG07N65FF , OSG07N65PF , OSG50R1K5AF , 8205A , OSG50R1K5FF , OSG50R1K5PF , OSG50R500AF , OSG50R500DF , OSG50R500FF , OSG50R500PF , OSG55R028HF , OSG55R028HTF .

History: IPP06CN10LG | CS50N06 | MTB6D0N03ATH8 | CS20N60

Keywords - OSG50R1K5DF MOSFET datasheet

 OSG50R1K5DF cross reference
 OSG50R1K5DF equivalent finder
 OSG50R1K5DF lookup
 OSG50R1K5DF substitution
 OSG50R1K5DF replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.