OSG55R580DF Todos los transistores

 

OSG55R580DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: OSG55R580DF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 550 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 46.6 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.58 Ohm
   Paquete / Cubierta: TO252
 

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OSG55R580DF Datasheet (PDF)

 ..1. Size:407K  oriental semi
 osg55r580df.pdf pdf_icon

OSG55R580DF

OSG55R580DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 4.1. Size:887K  oriental semi
 osg55r580def.pdf pdf_icon

OSG55R580DF

OSG55R580DEF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS E series is optimized for its switching chara

 5.1. Size:853K  oriental semi
 osg55r580fef.pdf pdf_icon

OSG55R580DF

OSG55R580FEF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS E series is optimized for its switching chara

 5.2. Size:1001K  oriental semi
 osg55r580pf.pdf pdf_icon

OSG55R580DF

OSG55R580PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... OSG55R290FF , OSG55R290PF , OSG55R380AF , OSG55R380DF , OSG55R380FF , OSG55R380PF , OSG55R580AF , OSG55R580DEF , 10N65 , OSG55R580FEF , OSG55R580FF , OSG55R580PF , OSG60R017HT3F , OSG60R018HT3ZF , OSG60R020HT3F , OSG60R022HT3ZF , OSG60R028HF .

History: STL80N3LLH6 | BUK962R8-30B

 

 
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