OSG55R580DF Datasheet. Specs and Replacement

Type Designator: OSG55R580DF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.4 nS

Cossⓘ - Output Capacitance: 46.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO252

OSG55R580DF substitution

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OSG55R580DF datasheet

 ..1. Size:407K  oriental semi
 osg55r580df.pdf pdf_icon

OSG55R580DF

OSG55R580DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

 4.1. Size:887K  oriental semi
 osg55r580def.pdf pdf_icon

OSG55R580DF

OSG55R580DEF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS E series is optimized for its switching chara... See More ⇒

 5.1. Size:853K  oriental semi
 osg55r580fef.pdf pdf_icon

OSG55R580DF

OSG55R580FEF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS E series is optimized for its switching chara... See More ⇒

 5.2. Size:1001K  oriental semi
 osg55r580pf.pdf pdf_icon

OSG55R580DF

OSG55R580PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch... See More ⇒

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Detailed specifications: OSG55R290FF, OSG55R290PF, OSG55R380AF, OSG55R380DF, OSG55R380FF, OSG55R380PF, OSG55R580AF, OSG55R580DEF, 4N60, OSG55R580FEF, OSG55R580FF, OSG55R580PF, OSG60R017HT3F, OSG60R018HT3ZF, OSG60R020HT3F, OSG60R022HT3ZF, OSG60R028HF

Keywords - OSG55R580DF MOSFET specs

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