Справочник MOSFET. OSG55R580DF

 

OSG55R580DF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG55R580DF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 37 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 550 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8.4 ns
   Cossⓘ - Выходная емкость: 46.6 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.58 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

OSG55R580DF Datasheet (PDF)

 ..1. Size:407K  oriental semi
 osg55r580df.pdf pdf_icon

OSG55R580DF

OSG55R580DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 4.1. Size:887K  oriental semi
 osg55r580def.pdf pdf_icon

OSG55R580DF

OSG55R580DEF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS E series is optimized for its switching chara

 5.1. Size:853K  oriental semi
 osg55r580fef.pdf pdf_icon

OSG55R580DF

OSG55R580FEF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS E series is optimized for its switching chara

 5.2. Size:1001K  oriental semi
 osg55r580pf.pdf pdf_icon

OSG55R580DF

OSG55R580PF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

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History: SVF4N60CAMJ | SPD04N60C3 | PNMET20V06E | FDC654P | 2SK1501 | MDS3604URH | OSG55R074HSZF

 

 
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