OSG60R200FSZF
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: OSG60R200FSZF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 600
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 20
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 68.2
nS
Cossⓘ - Capacitancia
de salida: 98.6
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2
Ohm
Paquete / Cubierta:
TO220F
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OSG60R200FSZF
Datasheet (PDF)
7.1. Size:401K oriental semi
osg60r2k2dsf.pdf 
OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
7.5. Size:373K oriental semi
osg60r2k8af.pdf
OSG60R2K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
7.6. Size:980K oriental semi
osg60r2k2df.pdf
OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
7.7. Size:393K oriental semi
osg60r2k2fsf.pdf
OSG60R2K2FSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
7.8. Size:372K oriental semi
osg60r2k8df.pdf
OSG60R2K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
7.10. Size:950K oriental semi
osg60r2k2af.pdf
OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch
7.12. Size:374K oriental semi
osg60r2k2asf.pdf
OSG60R2K2ASF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara
Otros transistores... OSG60R1K2AF
, OSG60R1K2DF
, OSG60R1K2FF
, OSG60R1K2PF
, OSG60R1K8AF
, OSG60R1K8DF
, OSG60R1K8FF
, OSG60R1K8PF
, P60NF06
, OSG60R200JSZF
, OSG60R200PSZF
, OSG60R260AF
, OSG60R260DF
, OSG60R260FF
, EMP21N03HC
, OSG60R260IF
, OSG60R260PF
.
History: HGN035N10AL
| STD7N80K5
