OSG60R200FSZF PDF and Equivalents Search

 

OSG60R200FSZF Specs and Replacement


   Type Designator: OSG60R200FSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 68.2 nS
   Cossⓘ - Output Capacitance: 98.6 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO220F
 

 OSG60R200FSZF substitution

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OSG60R200FSZF datasheet

 ..1. Size:844K  oriental semi
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OSG60R200FSZF

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 5.1. Size:948K  oriental semi
osg60r200pszf.pdf pdf_icon

OSG60R200FSZF

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 5.2. Size:813K  oriental semi
osg60r200jszf.pdf pdf_icon

OSG60R200FSZF

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 7.1. Size:401K  oriental semi
osg60r2k2dsf.pdf pdf_icon

OSG60R200FSZF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara... See More ⇒

Detailed specifications: OSG60R1K2AF , OSG60R1K2DF , OSG60R1K2FF , OSG60R1K2PF , OSG60R1K8AF , OSG60R1K8DF , OSG60R1K8FF , OSG60R1K8PF , AO4407 , OSG60R200JSZF , OSG60R200PSZF , OSG60R260AF , OSG60R260DF , OSG60R260FF , EMP21N03HC , OSG60R260IF , OSG60R260PF .

History: FDD10N20LZTM | NCE60NF200F

Keywords - OSG60R200FSZF MOSFET specs

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