All MOSFET. OSG60R200FSZF Datasheet

 

OSG60R200FSZF Datasheet and Replacement


   Type Designator: OSG60R200FSZF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 68.2 nS
   Cossⓘ - Output Capacitance: 98.6 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO220F
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OSG60R200FSZF Datasheet (PDF)

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OSG60R200FSZF

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OSG60R200FSZF

 5.2. Size:813K  oriental semi
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OSG60R200FSZF

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OSG60R200FSZF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

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History: DMN2300UFB4 | DMP2104LP | DMN60H3D5SK3 | TK2P60D | IRFBG20

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