Справочник MOSFET. OSG60R200FSZF

 

OSG60R200FSZF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: OSG60R200FSZF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 34 W
   Предельно допустимое напряжение сток-исток |Uds|: 600 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 20 A
   Максимальная температура канала (Tj): 150 °C
   Время нарастания (tr): 68.2 ns
   Выходная емкость (Cd): 98.6 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для OSG60R200FSZF

 

 

OSG60R200FSZF Datasheet (PDF)

 ..1. Size:844K  oriental semi
osg60r200fszf.pdf

OSG60R200FSZF
OSG60R200FSZF

 5.1. Size:948K  oriental semi
osg60r200pszf.pdf

OSG60R200FSZF
OSG60R200FSZF

 5.2. Size:813K  oriental semi
osg60r200jszf.pdf

OSG60R200FSZF
OSG60R200FSZF

 7.1. Size:401K  oriental semi
osg60r2k2dsf.pdf

OSG60R200FSZF
OSG60R200FSZF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 7.2. Size:999K  oriental semi
osg60r260af.pdf

OSG60R200FSZF
OSG60R200FSZF

 7.3. Size:997K  oriental semi
osg60r260df.pdf

OSG60R200FSZF
OSG60R200FSZF

 7.4. Size:998K  oriental semi
osg60r260ff.pdf

OSG60R200FSZF
OSG60R200FSZF

 7.5. Size:373K  oriental semi
osg60r2k8af.pdf

OSG60R200FSZF
OSG60R200FSZF

OSG60R2K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.6. Size:980K  oriental semi
osg60r2k2df.pdf

OSG60R200FSZF
OSG60R200FSZF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.7. Size:393K  oriental semi
osg60r2k2fsf.pdf

OSG60R200FSZF
OSG60R200FSZF

OSG60R2K2FSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 7.8. Size:372K  oriental semi
osg60r2k8df.pdf

OSG60R200FSZF
OSG60R200FSZF

OSG60R2K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.9. Size:1000K  oriental semi
osg60r260if.pdf

OSG60R200FSZF
OSG60R200FSZF

 7.10. Size:950K  oriental semi
osg60r2k2af.pdf

OSG60R200FSZF
OSG60R200FSZF

OSG60R2K2AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 7.11. Size:1003K  oriental semi
osg60r260pf.pdf

OSG60R200FSZF
OSG60R200FSZF

 7.12. Size:374K  oriental semi
osg60r2k2asf.pdf

OSG60R200FSZF
OSG60R200FSZF

OSG60R2K2ASF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

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