OSG60R2K8DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: OSG60R2K8DF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 18.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 1.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.1 nS

Cossⓘ - Capacitancia de salida: 10.28 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO252

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OSG60R2K8DF datasheet

 ..1. Size:372K  oriental semi
 osg60r2k8df.pdf pdf_icon

OSG60R2K8DF

OSG60R2K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:373K  oriental semi
 osg60r2k8af.pdf pdf_icon

OSG60R2K8DF

OSG60R2K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:401K  oriental semi
 osg60r2k2dsf.pdf pdf_icon

OSG60R2K8DF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 6.2. Size:980K  oriental semi
 osg60r2k2df.pdf pdf_icon

OSG60R2K8DF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

MOSTRAR MÁS

Otros transistores... OSG60R260IF, OSG60R260PF, OSG60R2K2AF, OSG60R2K2ASF, OSG60R2K2DF, OSG60R2K2DSF, OSG60R2K2FSF, OSG60R2K8AF, STF13NM60N, OSG60R320FT3ZF, OSG60R340DT3F, OSG60R340FT3F, OSG60R360DSF, OSG60R360DZF, OSG60R360FSF, OSG60R380AF, OSG60R380DF