All MOSFET. OSG60R2K8DF Datasheet

 

OSG60R2K8DF Datasheet and Replacement


   Type Designator: OSG60R2K8DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 18.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.1 nS
   Cossⓘ - Output Capacitance: 10.28 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
   Package: TO252
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OSG60R2K8DF Datasheet (PDF)

 ..1. Size:372K  oriental semi
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OSG60R2K8DF

OSG60R2K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:373K  oriental semi
osg60r2k8af.pdf pdf_icon

OSG60R2K8DF

OSG60R2K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:401K  oriental semi
osg60r2k2dsf.pdf pdf_icon

OSG60R2K8DF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 6.2. Size:980K  oriental semi
osg60r2k2df.pdf pdf_icon

OSG60R2K8DF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: CED01N7 | BUK7M6R7-40H | HY1804V | HAT1040T | HGA037N10T | JCS4N60FB | AOI538

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