Справочник MOSFET. OSG60R2K8DF

 

OSG60R2K8DF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: OSG60R2K8DF
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 18.1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 8.1 ns
   Cossⓘ - Выходная емкость: 10.28 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.8 Ohm
   Тип корпуса: TO252
     - подбор MOSFET транзистора по параметрам

 

OSG60R2K8DF Datasheet (PDF)

 ..1. Size:372K  oriental semi
osg60r2k8df.pdfpdf_icon

OSG60R2K8DF

OSG60R2K8DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 5.1. Size:373K  oriental semi
osg60r2k8af.pdfpdf_icon

OSG60R2K8DF

OSG60R2K8AF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

 6.1. Size:401K  oriental semi
osg60r2k2dsf.pdfpdf_icon

OSG60R2K8DF

OSG60R2K2DSF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS S series is optimized for its switching chara

 6.2. Size:980K  oriental semi
osg60r2k2df.pdfpdf_icon

OSG60R2K8DF

OSG60R2K2DF Enhancement Mode N-Channel Power MOSFET General Description The GreenMOS high voltage MOSFET utilizes charge balance technology to achieve outstanding low on-resistance and lower gate charge. It is engineered to minimize conduction loss, provide superior switching performance and robust avalanche capability. The GreenMOS Generic series is optimized for extreme switch

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PMBF5485 | FL6L5201 | SM4383NSKP | SJMN600R60F | CHM4955JGP | FRS230H | JANSR2N7401

 

 
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