FDN304P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDN304P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 240 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.052 Ohm
Encapsulados: SSOT3
Búsqueda de reemplazo de FDN304P MOSFET
- Selecciónⓘ de transistores por parámetros
FDN304P datasheet
fdn304p.pdf
January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8
fdn304p.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdn304p.pdf
SMD Type MOSFET P-Channel MOSFET FDN304P (KDN304P) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-20V 3 ID =-2.4A (VGS =-4.5V) RDS(ON) 52m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V) +0.1 1.9-0.1 1.Gate D 2.Source 3.Drain G S Absolute Maximum Ratings
fdn304p.pdf
R UMW UMW FDN304P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN304P V(BR)DSS RDS(on)MAX ID 52m @ -4.5V -20 V -2.4A 70m @ -2.5V 100m @ -1.8V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management MARKING Equivalent Circuit SOT 23 1. GATE 2. SOURCE 3. DR
Otros transistores... FDMS86500L , FDMS86520L , FDMS8848NZ , FDMS8888 , STM4886E , FDMS9620S , STM4886 , FDN302P , BS170 , FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , FDN359BN , STM4884A .
History: FQB50N06
History: FQB50N06
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
6426 mosfet | b1565 | nce82h140 | 2n2369 equivalent | 2sd313 datasheet | k8a50d datasheet | 2sc381 | datasheet mosfet
