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FDN304P Specs and Replacement


   Type Designator: FDN304P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SSOT3
 

 FDN304P substitution

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FDN304P Specs

 ..1. Size:113K  fairchild semi
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FDN304P

January 2001 FDN304P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 2.4 A, 20 V. RDS(ON) = 52 m @ VGS = 4.5 V Fairchild s advanced low voltage PowerTrench process. RDS(ON) = 70 m @ VGS = 2.5 V It has been optimized for battery power management RDS(ON) = 100 m @ VGS = 1.8 ... See More ⇒

 ..2. Size:220K  onsemi
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FDN304P

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 ..3. Size:1261K  kexin
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FDN304P

SMD Type MOSFET P-Channel MOSFET FDN304P (KDN304P) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-20V 3 ID =-2.4A (VGS =-4.5V) RDS(ON) 52m (VGS =-4.5V) RDS(ON) 70m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V) +0.1 1.9-0.1 1.Gate D 2.Source 3.Drain G S Absolute Maximum Ratings ... See More ⇒

 ..4. Size:819K  umw-ic
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FDN304P

R UMW UMW FDN304P SOT-23 Plastic-Encapsulate MOSFETS P-Channel 20-V(D-S) MOSFET FDN304P V(BR)DSS RDS(on)MAX ID 52m @ -4.5V -20 V -2.4A 70m @ -2.5V 100m @ -1.8V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management MARKING Equivalent Circuit SOT 23 1. GATE 2. SOURCE 3. DR... See More ⇒

Detailed specifications: FDMS86500L , FDMS86520L , FDMS8848NZ , FDMS8888 , STM4886E , FDMS9620S , STM4886 , FDN302P , BS170 , FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , FDN359BN , STM4884A .

Keywords - FDN304P MOSFET specs

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