FDN342P Todos los transistores

 

FDN342P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDN342P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 175 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm

Encapsulados: SSOT3

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FDN342P datasheet

 ..1. Size:139K  fairchild semi
 fdn342p.pdf pdf_icon

FDN342P

August 1999 FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 V a rugged gate version of Fairchild Semiconductor's RDS(ON) = 0.13 @ VGS = -2.5 V. advanced PowerTrench process. It has been optimized for power management applications for a wide range

 9.1. Size:248K  fairchild semi
 fdn340p.pdf pdf_icon

FDN342P

FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V = 4.5 V DS(ON) GS using Fairchld Semiconductor advanced Power Trench i process that has been especially talored to minimize R = 110 m @ V = 2.5 V i DS(ON) GS the on-state resistance and yet maint

 9.2. Size:206K  onsemi
 fdn340p.pdf pdf_icon

FDN342P

September 200 February 2007 FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor advanced Power Trench R = 110 m @ V = 2.5 V DS(ON) GS process that has been especially tailored to minimize the on-sta

 9.3. Size:401K  umw-ic
 fdn340p.pdf pdf_icon

FDN342P

R UMW UMW FDN340P MOSFETS SOT-23 Plastic-Encapsulate P-Channel 20-V(D-S) MOSFET FDN340P V(BR)DSS RDS(on)MAX ID 70m @ -4.5V -20 V -2A 110m @ -2.5V 210m @ -1.8V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management SOT 23 MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN

MOSTRAR MÁS

Otros transistores... FDMS9620S , STM4886 , FDN302P , FDN304P , FDN304PZ , FDN306P , FDN308P , FDN327N , 10N65 , FDN352AP , FDN359BN , STM4884A , FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P .

 

 

 

 

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