FDN342P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

August 1999FDN342PP-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 Va rugged gate version of Fairchild Semiconductor's RDS(ON) = 0.13 @ VGS = -2.5 V.advanced PowerTrench process. It has been optimizedfor power management applications for a wide range

FDN340PSingle P-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V =4.5 VDS(ON) GSusing Fairchld Semiconductor advanced Power Trench iprocess that has been especially talored to minimize R = 110 m @ V =2.5 ViDS(ON) GSthe on-state resistance and yet maint

September 200February 2007FDN340PSingle P-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V =4.5 VDS(ON) GSusing Fairchild Semiconductor advanced Power Trench R = 110 m @ V =2.5 VDS(ON) GSprocess that has been especially tailored to minimize the on-sta

RUMW UMW FDN340PMOSFETSSOT-23 Plastic-Encapsulate P-Channel 20-V(D-S) MOSFETFDN340P V(BR)DSS RDS(on)MAX ID70m@ -4.5V-20 V -2A110m@ -2.5V210m@ -1.8VFEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management SOT23 MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN

FDN340PP-Channel Enhancement Mode MOSFETFeature -20V/-2A, RDS(ON) GS = 120m(MAX) @V = -4.5V.DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and RuggedSOT-23SOT-23 for Surface Mount PackageApplications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless O