FDN342P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDN342P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SSOT3

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FDN342P Datasheet (PDF)

..1. Size:139K fairchild semi
fdn342p.pdf

August 1999FDN342PP-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 Va rugged gate version of Fairchild Semiconductor's RDS(ON) = 0.13 @ VGS = -2.5 V.advanced PowerTrench process. It has been optimizedfor power management applications for a wide range

9.1. Size:248K fairchild semi
fdn340p.pdf

FDN340PSingle P-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V =4.5 VDS(ON) GSusing Fairchld Semiconductor advanced Power Trench iprocess that has been especially talored to minimize R = 110 m @ V =2.5 ViDS(ON) GSthe on-state resistance and yet maint

9.2. Size:206K onsemi
fdn340p.pdf

September 200February 2007FDN340PSingle P-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V =4.5 VDS(ON) GSusing Fairchild Semiconductor advanced Power Trench R = 110 m @ V =2.5 VDS(ON) GSprocess that has been especially tailored to minimize the on-sta

9.3. Size:401K umw-ic
fdn340p.pdf

RUMW UMW FDN340PMOSFETSSOT-23 Plastic-Encapsulate P-Channel 20-V(D-S) MOSFETFDN340P V(BR)DSS RDS(on)MAX ID70m@ -4.5V-20 V -2A110m@ -2.5V210m@ -1.8VFEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management SOT23 MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN

9.4. Size:330K cn shikues
fdn340p.pdf

FDN340PP-Channel Enhancement Mode MOSFETFeature -20V/-2A, RDS(ON) GS = 120m(MAX) @V = -4.5V.DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and RuggedSOT-23SOT-23 for Surface Mount PackageApplications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless O

9.5. Size:1610K cn tech public
fdn340p.pdf

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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