All MOSFET. FDN342P Datasheet

 

FDN342P MOSFET. Datasheet pdf. Equivalent

Type Designator: FDN342P

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.5 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.5 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.08 Ohm

Package: SSOT

FDN342P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDN342P Datasheet (PDF)

0.1. fdn342p.pdf Size:139K _fairchild_semi

FDN342P
FDN342P

August 1999 FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in • -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V a rugged gate version of Fairchild Semiconductor's RDS(ON) = 0.13 Ω @ VGS = -2.5 V. advanced PowerTrench process. It has been optimized for power management applications for a wide range

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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