FDN342P Datasheet. Specs and Replacement

Type Designator: FDN342P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 175 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SSOT3

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FDN342P datasheet

 ..1. Size:139K  fairchild semi
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FDN342P

August 1999 FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 V a rugged gate version of Fairchild Semiconductor's RDS(ON) = 0.13 @ VGS = -2.5 V. advanced PowerTrench process. It has been optimized for power management applications for a wide range ... See More ⇒

 9.1. Size:248K  fairchild semi
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FDN342P

FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V = 4.5 V DS(ON) GS using Fairchld Semiconductor advanced Power Trench i process that has been especially talored to minimize R = 110 m @ V = 2.5 V i DS(ON) GS the on-state resistance and yet maint... See More ⇒

 9.2. Size:206K  onsemi
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FDN342P

September 200 February 2007 FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor advanced Power Trench R = 110 m @ V = 2.5 V DS(ON) GS process that has been especially tailored to minimize the on-sta... See More ⇒

 9.3. Size:401K  umw-ic
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FDN342P

R UMW UMW FDN340P MOSFETS SOT-23 Plastic-Encapsulate P-Channel 20-V(D-S) MOSFET FDN340P V(BR)DSS RDS(on)MAX ID 70m @ -4.5V -20 V -2A 110m @ -2.5V 210m @ -1.8V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management SOT 23 MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN... See More ⇒

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Detailed specifications: FDMS9620S, STM4886, FDN302P, FDN304P, FDN304PZ, FDN306P, FDN308P, FDN327N, 10N65, FDN352AP, FDN359BN, STM4884A, FDN361BN, STM4884, FDN372S, STM4880, FDN5618P

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