FDN342P
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDN342P
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6.3
nC
trⓘ - Rise Time: 8
nS
Cossⓘ -
Output Capacitance: 175
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
SSOT3
FDN342P
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDN342P
Datasheet (PDF)
..1. Size:139K fairchild semi
fdn342p.pdf 
August 1999FDN342PP-Channel 2.5V Specified PowerTrenchTM MOSFETGeneral Description FeaturesThis P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 Va rugged gate version of Fairchild Semiconductor's RDS(ON) = 0.13 @ VGS = -2.5 V.advanced PowerTrench process. It has been optimizedfor power management applications for a wide range
9.1. Size:248K fairchild semi
fdn340p.pdf
FDN340PSingle P-Channel, Logic Level, PowerTrench MOSFETGeneral DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V =4.5 VDS(ON) GSusing Fairchld Semiconductor advanced Power Trench iprocess that has been especially talored to minimize R = 110 m @ V =2.5 ViDS(ON) GSthe on-state resistance and yet maint
9.2. Size:206K onsemi
fdn340p.pdf
September 200February 2007FDN340PSingle P-Channel, Logic Level, PowerTrench MOSFETGeneral Description FeaturesThis P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V =4.5 VDS(ON) GSusing Fairchild Semiconductor advanced Power Trench R = 110 m @ V =2.5 VDS(ON) GSprocess that has been especially tailored to minimize the on-sta
9.3. Size:401K umw-ic
fdn340p.pdf
RUMW UMW FDN340PMOSFETSSOT-23 Plastic-Encapsulate P-Channel 20-V(D-S) MOSFETFDN340P V(BR)DSS RDS(on)MAX ID70m@ -4.5V-20 V -2A110m@ -2.5V210m@ -1.8VFEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management SOT23 MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN
9.4. Size:330K cn shikues
fdn340p.pdf
FDN340PP-Channel Enhancement Mode MOSFETFeature -20V/-2A, RDS(ON) GS = 120m(MAX) @V = -4.5V.DS(ON) GS R = 150m(MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low RReliable and RuggedSOT-23SOT-23 for Surface Mount PackageApplications Power Management Portable Equipment and Battery Powered Systems.AT =25 Unless O
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