FDN342P - описание и поиск аналогов

August 1999 FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced in -2 A, -20 V. RDS(ON) = 0.08 @ VGS = -4.5 V a rugged gate version of Fairchild Semiconductor's RDS(ON) = 0.13 @ VGS = -2.5 V. advanced PowerTrench process. It has been optimized for power management applications for a wide range

FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V = 4.5 V DS(ON) GS using Fairchld Semiconductor advanced Power Trench i process that has been especially talored to minimize R = 110 m @ V = 2.5 V i DS(ON) GS the on-state resistance and yet maint

September 200 February 2007 FDN340P Single P-Channel, Logic Level, PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced 2A, 20 V R =70 m @ V = 4.5 V DS(ON) GS using Fairchild Semiconductor advanced Power Trench R = 110 m @ V = 2.5 V DS(ON) GS process that has been especially tailored to minimize the on-sta

R UMW UMW FDN340P MOSFETS SOT-23 Plastic-Encapsulate P-Channel 20-V(D-S) MOSFET FDN340P V(BR)DSS RDS(on)MAX ID 70m @ -4.5V -20 V -2A 110m @ -2.5V 210m @ -1.8V FEATURE APPLICATION TrenchFET Power MOSFET Battery protection Supper high density cell design Load switch Battery management SOT 23 MARKING Equivalent Circuit 1. GATE 2. SOURCE 3. DRAIN

FDN340P P-Channel Enhancement Mode MOSFET Feature -20V/-2A, RDS(ON) GS = 120m (MAX) @V = -4.5V. DS(ON) GS R = 150m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SOT-23 SOT-23 for Surface Mount Package Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 Unless O