FDN359BN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDN359BN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
Paquete / Cubierta: SSOT3
Búsqueda de reemplazo de MOSFET FDN359BN
FDN359BN Datasheet (PDF)
fdn359bn f095.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
fdn359bn.pdf
January 2006 FDN359BN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description 2.7 A, 30 V. RDS(ON)= 0.046 @ VGS = 10 V This N-Channel Logic Level MOSFET is produced RDS(ON)= 0.060 @ VGS = 4.5 V using Fairchilds Semiconductors advancedPowerTrench process that has been especially tailored Very fast switching speed. to minimize on-state r
fdn359an.pdf
April 1999 FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET General Description FeaturesThis N-Channel Logic Level MOSFET is produced2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 Vusing Fairchild Semiconductor's advanced RDS(ON) = 0.060 @ VGS = 4.5 V.PowerTrench process that has been especially tailoredto minimize on-state resistance and yet maintainVery fast switching
fdn359an.pdf
FDN359AN N-Channel Logic Level PowerTrenchTM MOSFET Features General Description2.7 A, 30 V. RDS(ON) = 0.046 @ VGS = 10 VThis N-Channel Logic Level MOSFET is produced RDS(ON) = 0.060 @ VGS = 4.5 V.using ON Semiconductor's advanced PowerTrench process that has been especially tailored Very fast switching.to minimize on-state resistance and yet maintain Low gate cha
fdn359an.pdf
FDN359ANN-Channel Enhancement Mode MOSFET Feature DS(ON) GS 30V/3.0A, R = 45m(MAX) @V = 10V. DS(ON) GS R =50m(MAX) @V = 4.5V. DS(ON) GS R =65m(MAX) @V = 2.5V. DS(ON) .Super High dense cell design for extremely low R Reliable and Rugged. SOT-23 SOT-23 for Surface Mount Package. Applications Power Management Portable Equipment and Battery Powered System
Otros transistores... FDN302P , FDN304P , FDN304PZ , FDN306P , FDN308P , FDN327N , FDN342P , FDN352AP , SKD502T , STM4884A , FDN361BN , STM4884 , FDN372S , STM4880 , FDN5618P , FDN5630 , FDN8601 .
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